1 h igh diode semiconductor do-4 1 applications 1n47 series do-4 1 glass-encapsulate diodes zener diodes features p d 1.0w v z 3.3v-100v ?? stabilizing voltage item symbol unit conditions max power dissipation p d w l=4mm,t l =25 1.0 1) zener current i z ma p v /v z maximum junction temperature t j 175 storage temperature range t stg -65 to +175 electrical characteristics t a =25 unl ess otherwise specified item symbol unit conditions max thermal resistance r ja /w junction to ambient air, l=4mm,t l =constant 110 forward voltage v f v i f =200ma 1.2 notes: valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
electrical characteristics (t a =25 unless otherwise noted) nominal zener voltage 1) test current maximum dynamic impedance maximum reverse leakage current surge current 3) maximum regulator current 2) v z at i zt i zt z zt at i zt z zk at i zk i zk ir test voltage v r at t a =25 i r i zm part number v ma ma a v ma ma 1n4728a 3.3 76 10 400 1 100 1 1380 276 1n4729a 3.6 69 10 400 1 100 1 1260 252 1n4730a 3.9 64 9 400 1 50 1 1190 234 1n4731a 4.3 58 9 400 1 10 1 1070 217 1n4732a 4.7 53 8 500 1 10 1 970 193 1n4733a 5.1 49 7 550 1 10 1 890 178 1n4734a 5.6 45 5 600 1 10 2 810 162 1n4735a 6.2 41 2 700 1 10 3 730 146 1n4736a 6.8 37 3.5 700 1 10 4 660 133 1n4737a 7.5 34 4 700 0.5 10 5 605 121 1n4738a 8.2 31 4.5 700 0.5 10 6 550 110 1n4739a 9.1 28 5 700 0.5 10 7 500 100 1n4740a 10 25 7 700 0.25 10 7.6 454 91 1n4741a 11 23 8 700 0.25 5 8.4 414 83 1n4742a 12 21 9 700 0.25 5 9.1 380 76 1n4743a 13 19 10 700 0.25 5 9.9 344 69 1n4744a 15 17 14 700 0.25 5 11.4 304 61 1n4745a 16 15.5 16 700 0.25 5 12.2 285 57 1n4746a 18 14 20 750 0.25 5 13.7 250 50 1n4747a 20 12.5 22 750 0.25 5 15.2 225 45 1n4748a 22 11.5 23 750 0.25 5 16.7 205 41 1n4749a 24 10.5 25 750 0.25 5 18.2 190 38 1n4750a 27 9.5 35 750 0.25 5 20.6 170 34 1n4751a 30 8.5 40 1000 0.25 5 22.8 150 30 1n4752a 33 7.5 45 1000 0.25 5 25.1 135 27 1n4753a 36 7 50 1000 0.25 5 27.4 125 25 1n4754a 39 6.5 60 1000 0.25 5 29.7 115 23 1n4755a 43 6 70 1500 0.25 5 32.7 110 22 1n4756a 47 5.5 80 1500 0.25 5 35.8 95 19 1n4757a 51 5 95 1500 0.25 5 38.8 90 18 1n4758a 56 4.5 110 2000 0.25 5 42.6 80 16 1n4759a 62 4 125 2000 0.25 5 47.1 70 14 1n4760a 68 3.7 150 2000 0.25 5 51.7 65 13 1n4761a 75 3.3 175 2000 0.25 5 56 60 12 1n4762a 82 3.0 200 3000 0.25 5 62.2 55 11 1n4763a 91 2.8 250 3000 0.25 5 69.2 50 10 1n4764a 100 2.5 350 3000 0.25 5 76.0 45 9 notes: 1) based on dc-measurement at thermal equilibrium wh ile maintaining the lead temperature (tl) at 30 +1 , 9.5 mm (3/8") from the diode body 2) valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature 3) tp = 10 ms h igh diode semiconductor
typical characteristics 3 h igh diode semiconductor admissible power dissipation versus ambient temperature valid provided that leads are kept at ambient temperature at a distance of 10mm from case 1.0 0.8 0.6 0.4 0.2 0 0 100 200 p tot, power dissipation,watts w 100 80 60 40 20 0 5 10 15 20 25 30 1n4728 iz,test current,milliampers vz,zener voltage,volts ma breakdown characteristics v 1n4731 1n4732 1n4733 1n4735 1n4739 1n4741 1n4742 1n4744 1n4750 1n4747 1n4748 1n4749 ambient temperature, c
4 jshd jshd h igh diode semiconductor do-4 1 unit: in inches (millimeters) 1.02(26.0) min .177(4.50) max .034(0.86) max .102(2.60) max 1.02(26.0) min
5 h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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